Vishay 60V TrenchFET fourth-generation n-channel power MOSFET is specially designed for standard gate drive circuits

The device is designed for standard gate drive circuits with gate charges as low as 22.5 nC and QOSS as low as 34.2 nC in the PowerPAK® 1212-8s package.

Pennsylvania, MALVERN -- August 12, 2019 -- a few days ago, Vishay Intertechnology, Inc. (NYSE: VSH) announced the launch of the new 60 V TrenchFET® fourth-generation n-channel power MOSFET-- SiSS22DN, the industry's first device suitable for standard grid drive circuit, 10 V condition maximum on resistance down to 4 mW, using thermal enhanced 3.3 mm x 3.3 mm PowerPAK® 1212-8s package.Vishay Siliconix SiSS22DN is specifically designed to improve the efficiency and power density of the power conversion topology, with a gate charge of only 22.5nc and a low output charge (QOSS).

Unlike logic level 60 V devices, SiSS22DN increases the typical VGS (th) and Miller platform voltages and is suitable for circuits with gate drive voltages higher than 6 V. The optimal dynamic characteristics of the devices shorten dead time and prevent breakdown in synchronous rectifier applications.SiSS22DN the low on resistance is 4.8% lower than the second ranked product in the industry -- about the same as the leading logic level devices -- QOSS is 34.2 nC, QOSS product with on resistance, namely the zero voltage switch (ZVS) or switch cabinet topology power conversion design, MOSFET important value coefficient (FOM) reached the best level.To achieve higher power density, the device will have 65% less PCB space than a similar 6 mm x 5 mm package solution.

SiSS22DN improved technical specification, after calibration minimize conduction and switching losses, more can achieve higher efficiency power management system components, including AC/DC and DC/DC topology synchronous rectifier, DC/DC converter main switch, buck - boost converter and half bridge MOSFET power level, as well as communication and server power supply OR - ing function, industrial facilities, electric tools and motor drive control and circuit protection, protection and management module of the battery is charging.

MOSFET has been tested by 100% RG and UIS, conforming to RoHS standard and halogen-free.

SiSS22DN can provide samples now and has achieved mass production. The supply cycle is 30 weeks, depending on market conditions.